High-field diffusion of electrons in silicon
- 1 September 1975
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (5) , 278-280
- https://doi.org/10.1063/1.88465
Abstract
With the time‐of‐flight technique we have measured the longitudinal diffusion coefficient of electrons in silicon at 300 K for fields from Ohmic up to 50 kV/cm. The results have been interpreted by means of Monte Carlo calculations with a theoretical model which includes the many‐valley (ellipsoidal and nonparabolic) structure of the band, acoustic intravalley, and several f and g intervalley scattering mechanisms.Keywords
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