Optoelectronic VLSI circuit fabrication
- 30 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 433-434
- https://doi.org/10.1109/leos.1993.379245
Abstract
We demonstrate for the first time key components of a fabrication sequence for immediately manufacturing monolithic optoelectronic very large scale integration (OE-VLSI) circuits and systems. An OE transceiver (generic smart pixel) was designed, regrown, and is nearing completion to demonstrate the high-density integration of LEDs, ridge lasers, and in-plane surface emitting lasers (IPSELs) with state-of-the-art VLSI GaAs MESFET transceiver designs.<>Keywords
This publication has 2 references indexed in Scilit:
- Laser Diodes And Refractory-metal Gate VLSI Gaas MESFETs For Smart PixelsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- High quantum efficiency monolithic arrays of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrorsApplied Physics Letters, 1992