Dissipative Tunneling in Dielectric Films
- 1 October 1988
- journal article
- research article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (10R) , 1852-1855
- https://doi.org/10.1143/jjap.27.1852
Abstract
A new phenomenon of the dissipative tunneling in insulator films has been found. This means that the conductivity of thin amorphous films of silicon nitride stimulated by a strong electric field in a magnetic field at low temperatures could be increased by increasing the electric field intensity. The magnetoresistance effect is positive in a relatively low electric field and becomes negative in a higher electric field. This effect is due to the charge carriers scattering on impurities under the barrier during tunneling in an external magnetic field and is strongly dependent on the electric field intensity.Keywords
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