Nonlinear hole transport through a submicron-size channel
- 4 February 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (6) , 925-927
- https://doi.org/10.1063/1.1543643
Abstract
We investigate hole transport through a submicron-size channel fabricated from a modulation-doped p-type GaAs/(AlGa)As single-quantum-well heterostructure. The intense electric field in the channel accelerates the holes beyond the inflection point of the lowest energy subband dispersion curve. This leads to current saturation and negative differential conduction effects in the current–voltage characteristics.Keywords
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