Detailed calculation of the density of gap states obtained by DLTS measurements of doped a–Si:H Schottky barrier diodes

1 January 1981

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 73 (1) , 217-221
https://doi.org/10.1063/1.33034

Abstract

A full numerical analysis of the nonequilibrium response of a Schottky‐barrier space charge region for an arbitrary density of states, g (E), has been developed. We apply these methods to our measurements of Deep Level Transient Spectroscopy (DLTS) in n‐type a–Si:H. This gives a quantitative picture of g (E) extending, in some cases, over 70% of the mobility gap. This analysis gives qualitative agreement to our previous interpretation of similar data but produces more reliable quantitative results and, in addition, discloses features in g (E) not apparant from our simpler approach. In particular it identifies the correct value of the thermal emission energy gap (near 2.0 eV).

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