Selective lift-off for preferential growth with molecular beam epitaxy

1 September 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (9) , 1186-1187
https://doi.org/10.1109/T-ED.1977.18904

Abstract

Semiconducting material consisting of inlays of different doping or composition in selective areas may be grown by molecular beam epitaxy (MBE). The growth morphology showed that it is possible to fill an etched hole with MBE without the formation of voids resulting from facet growth as observed in other growth techniques. This regrowth process may have potential for applications to integrated microwave and optoelectric devices.

Keywords

MORPHOLOGY
BEAM
MICROWAVE
EPITAXY
LIFT
VOIDS
FACET
ETCHED
GROWN
PREFERENTIAL