Thermally stimulated and stationary Hall effect measurements on CdGa2S4

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Abstract
Hall effect measurements have been carried out on CdGa2S4, a semiconductor with a high native defect concentration (about 1027 m-3). The mobility under stationary conditions of illumination is found to be proportional to T1.35, indicating that the scattering mechanism is mainly due to charged centres and probably also to neutral defect centres and dipoles. The mobility under transient conditions existing during the presence of thermally stimulated conductivity has also been measured. The behaviour can be explained by an increase of the number of ionized defect centres due to thermal release of electrons that were trapped at these centres during illumination at lower temperatures. In both cases n-type conductivity is found.
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