Demonstration of 140 A, 800 V 4H-SiC pin /Schottkybarrierdiodeswith multi-step junction termination extension structures
- 30 August 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (18) , 1139-1140
- https://doi.org/10.1049/el:20010777
Abstract
DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.Keywords
This publication has 1 reference indexed in Scilit:
- Analysis of a high-voltage merged p-i-n/Schottky (MPS) rectifierIEEE Electron Device Letters, 1987