Theory of the dynamic magnetic response of : A heavy-fermion semiconductor
- 15 June 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (24) , 13984-13995
- https://doi.org/10.1103/physrevb.45.13984
Abstract
The properties of the semiconducting phase of heavy-fermion systems are examined within the framework of mean-field theory. The theory exhibits the possibility of a transition from a high-temperature local-moment state to a low-temperature, semiconducting state. The low-temperature, semiconducting state has an indirect band gap that is reduced by many-body renormalizations. The magnetic properties of this system are examined within this mean-field approximation and are compared with the results of recent inelastic-neutron-scattering experiments.Keywords
This publication has 28 references indexed in Scilit:
- Gap in the magnetic excitation spectrum ofPhysical Review B, 1991
- Hybridization gap inPhysical Review B, 1990
- Formation of an anisotropic energy gap in the valence-fluctuating system of CeNiSnPhysical Review B, 1990
- Field-induced metallic state of YbB12 in high magnetic fieldsPhysica B: Condensed Matter, 1989
- Theory of Heavy Fermion SystemsPublished by Elsevier ,1988
- Mean-field theory of intermediate valence/heavy fermion systemsAdvances in Physics, 1987
- Mixed valence properties of YbB12Journal of Magnetism and Magnetic Materials, 1985
- Heavy-fermion systemsReviews of Modern Physics, 1984
- Magnetic susceptibility of mixed-valence rare-earth compoundsPhysical Review B, 1976
- Continuous and Discontinuous Semiconductor-Metal Transition in Samarium Monochalcogenides Under PressurePhysical Review Letters, 1970