Very low resistance ohmic contacts on p-type InP by direct plating
- 1 March 1982
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (5) , 398-400
- https://doi.org/10.1063/1.93116
Abstract
Very low resistance ohmic contacts (ρc ≃4×10−5 Ω cm2) have been formed on p‐type InP by light assisted plating of Au and Zn. The plating technique, which uses alternating positive and negative current pulses, is suitable for producing patterned, small care contacts on device structures and is compatible with established n‐type ohmic contacting procedures.Keywords
This publication has 4 references indexed in Scilit:
- Low resistance ohmic contacts to n- and p-InPSolid-State Electronics, 1981
- Schottky barriers and ohmic contacts on n-type InP based compound semiconductors for microwave FET'sIEEE Transactions on Electron Devices, 1981
- Characterization of ohmic contacts to InPThin Solid Films, 1979
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967