Laser-induced damage to semiconductors
- 1 February 1976
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 9 (2) , 215-224
- https://doi.org/10.1088/0022-3727/9/2/012
Abstract
An experimental study has been made of the damage to p-type silicon caused by a normal and a Q-switched ruby laser. For the normal laser irradiation, the crack-line formation was due to thermal stress. For the Q-switched laser irradiation, cracks extending into the volume of the crystal were produced at a high power density of about 350 MW cm-2. The damage threshold was almost independent of the mechanical damage depth and the ratio of the damage threshold for a mechanically lapped sample to that for a chemically polished one (IK/ID) was only about 1/2 approximately 1/3. The damage induced in GaP whose forbidden-band width is greater than the photon energy was also investigated.Keywords
This publication has 15 references indexed in Scilit:
- Normal laser damage of silicon solar cells without phase changeApplied Physics Letters, 1974
- Role of Surface Treatment in Laser Damage of GermaniumJournal of Applied Physics, 1971
- Nd: YAG laser-irradiation-induced damage to LiNbO3and KDPIEEE Journal of Quantum Electronics, 1971
- Interaction of High-Intensity Laser Beams with MetalsJournal of Applied Physics, 1970
- Ordering of Microcraters produced by a Laser on a Metal SurfaceNature, 1969
- Localized Damage of Metal Crystals by Laser IrradiationNature, 1968
- Laser Damage on Semiconductor SurfacesJournal of Applied Physics, 1967
- Semiconductor Surface Damage Produced by Ruby LasersJournal of Applied Physics, 1965
- On a new mode of deformation in indium antimonidePhilosophical Magazine, 1959
- Fractures Produced by Stress Pulses in Glass-like SolidsProceedings of the Physical Society, 1958