Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- 1 February 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (2A) , L105
- https://doi.org/10.1143/jjap.38.l105
Abstract
Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111)B substrates. On (001)-oriented GaAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epilayer quality is presently limited by the purity of the available tertiarybutylhydrazine.Keywords
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