Raman scattering in ultraheavily doped silicon

15 October 1985

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 32 (8) , 5464-5467
https://doi.org/10.1103/physrevb.32.5464

Abstract

Raman spectroscopy has been used to study compositional disorder in ultraheavily doped silicon. The disorder is characterized by line-shape asymmetry of the one-phonon mode and the scattering amplitude of the two-phonon transverse acoustic and transverse optic modes. For implantation doses exceeding the solubility limit, topological disorder also becomes important in determining the phonon correlation length.

Keywords

This publication has 7 references indexed in Scilit:

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