Model for the Electronic Transport Properties of Mixed Valency Semiconductors
- 1 October 1961
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 32 (10) , 2202-2206
- https://doi.org/10.1063/1.1777043
Abstract
It is shown that the simple ``hopping model'' for the transport processes of mixed valency semiconductors is inadequate for impurity concentrations [similar or greaterthan]1%. In particular, it is necessary to redefine (1) the number of free charge carriers, and (2) the density of available states because of the dominant role played by the impurities in the high concentration range.This publication has 10 references indexed in Scilit:
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