Sensitivity control of ISFETs by chemical surface modification
- 1 October 1985
- journal article
- Published by Elsevier in Sensors and Actuators
- Vol. 8 (2) , 129-148
- https://doi.org/10.1016/0250-6874(85)87010-4
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Electronic semiconducting oxides as pH sensorsSensors and Actuators, 1984
- Ion-sensitive field-effect transistors with inorganic gate oxide for pH sensingIEEE Transactions on Electron Devices, 1982
- ELECTROCHEMICAL REFERENCE ELECTRODE FOR THE ION-SELECTIVE FIELD EFFECT TRANSISTORChemistry Letters, 1982
- The Cation Concentration Response of Polymer Gate ISFETJournal of the Electrochemical Society, 1982
- Prototype sodium and potassium sensitive micro ISFETSSensors and Actuators, 1981
- Chemically modified parylene gate field effect transistorsJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1980
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979
- Ion-selective field effect transistors with polymeric membranesAnalytica Chimica Acta, 1978
- Site-binding model of the electrical double layer at the oxide/water interfaceJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1974
- Development of an Ion-Sensitive Solid-State Device for Neurophysiological MeasurementsIEEE Transactions on Biomedical Engineering, 1970