Theory of Multiple Spin-Flip Raman Scattering in Semiconductors

Considering the lowest-order electron-light coupling, we present a theory of multiple spin-flip ($\Delta S=n$; $n=2,3,\cdots$) Raman scattering based on the interaction of impurity spin states with virtual bound exciton states. The strength for the $\Delta S=n$ process is strongly magnetic field dependent and becomes comparable to the $\Delta S=1\mathrm{}$ case at low fields. The $\Delta S=n$ peak is at slightly lower energy than the $n$th overtone energy. These predictions may be checked experimentally.