A 2 to 40 GHz Monolithic Distributed Amplifier

1 November 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 015-017
https://doi.org/10.1109/gaas.1985.10399501

Abstract

A monolithic distributed amplifier (DA) which operates from 2 to 40 GHz is presented. The device has a gain of 4 dB over the entire band with a noise figure of less than 9 dB in K-band and 7 dB at 10 GHz. The output power at 1 dB compression is +12 dBm. Two chips were cascaded to achieve 8 dB gain from 2 to 40 GHz. The seven-section circuit has 476 μm total gate periphery and is fabricated on a 1.1 × 3.2 mm chip.

Keywords

TRANSMISSION LINE MEASUREMENTS
GAIN
SEMICONDUCTOR DEVICE MEASUREMENT
FIELD EFFECT TRANSISTORS
DISTRIBUTED AMPLIFIERS
POWER TRANSMISSION LINES
LOGIC GATES

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