11.4 Gbit/s silicon bipolar multiplexer IC employing 2 μm lithography transistors
- 7 December 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (25) , 1684-1685
- https://doi.org/10.1049/el:19891126
Abstract
A very high-speed 2:1 multiplexer IC operating up to 11.4 Gbit/s has been implemented. The circuit was fabricated using a 12 GHz non-polysilicon-emitter self-aligning bipolar process with 2 μm lithography. Despite realisation in a relatively simple technology, this is the highest operating speed yet achieved with any technology.Keywords
This publication has 1 reference indexed in Scilit:
- A Si bipolar 15 GHz static frequency divider and 10 Gb/s multiplexerPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003