Ideality factor of extrinsic base surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors

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Abstract
Various structures of Npn AlGaAs/GaAs heterojunction bipolar transistor have been fabricated to examine the ideality factor for extrinsic base surface recombination. Comparison of the measured results indicates that the base surface recombination current increases exponentially with the base-emitter voltage with an ideality factor of 1, rather than 2. This finding agrees with a published theoretical analysis.