LASER-ACTION THRESHOLD IN ELECTRON-BEAM EXCITED GALLIUM ARSENIDE
- 1 October 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 7 (7) , 200-202
- https://doi.org/10.1063/1.1754377
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Li-Mg, a Nearly Free-Electron AlloyPhysical Review B, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Threshold Relations and Diffraction Loss for Injection LasersIBM Journal of Research and Development, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962