A Possibility of Application of Photo-Etching of a-C:H Films to Relief Holograms

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Abstract
Amorphous C:H films prepared by glow discharge decomposition of C3H8 were found to exhibit thickness decrease under UV light exposure. Corresponding relation between the decrease of EPMA carbon signal intensity and the decreased amount of film thickness showed that this decrease was caused by photo-etching under UV light exposure. The estimated resolving power of this phenomenon is high enough to construct surface relief holograms. Direct formation of two beam interference relief holograms using an UV He–Cd laser has been tried for the first time. The photographed images reconstructed by a He–Ne laser (633 nm) and an Ar+ laser (488 nm) were shown to hold the diffraction relation and to give the correct value of grating period expected for optical configuration used at hologram recording. These results present confirmative evidence that the relief hologram was really constructed in the a-C:H film. Together with other experimental results, some discussions are given for an application of the film for high resolution write-once recording medium.

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