Structural lattice defects in silicon observed at111in by perturbed angular correlation

This publication has 5 references indexed in Scilit:

• Detection of In-P and In-Sb atom pairs by perturbed angular correlation in silicon
  Applied Physics Letters, 1986
• Perturbed angular correlation and Rutherford backscattering studies in indium implanted silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Detection of electronic perturbations in silicon after EC decay of 111In observed by PAC
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
• Ion-induced defects in semiconductors
  Nuclear Instruments and Methods, 1981
• Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
  Journal of Applied Physics, 1969