Radiation-hardened silicon-on-insulator complementary junction field-effect transistors

1 May 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (5) , 324-326
https://doi.org/10.1109/edl.1986.26388

Abstract

The effects of total-dose radiation have been investigated for complementary junction field-effect transistors fabricated in zone-melting recrystallized Si films on SiO2-coated Si substrates. With a - 5-V bias applied to the Si substrate during irradiation and device operation, both n- and p-channel devices show low threshold-voltage shift (<-0.09 and <-0.12 V, respectively), low leakage currents (<- 1- and 8rad (Si).

Keywords

SILICON ON INSULATOR TECHNOLOGY
FETS
SEMICONDUCTOR FILMS
DIODES
LEAKAGE CURRENT
DIELECTRIC SUBSTRATES
THRESHOLD VOLTAGE
JFET CIRCUITS
CMOS TECHNOLOGY
P-N JUNCTIONS

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