The Effect of Ion Implantation on Oxide Charge Storage in MOS Devices
- 1 January 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 22 (6) , 2168-2173
- https://doi.org/10.1109/tns.1975.4328099
Abstract
Measurements are reported in which the charge stored in the oxide of an MOS device exposed to ionizing radiation is studied as a function of oxide pretreatment. Implantation with Al+ ions is found to introduce electron traps into the oxide and the stability of these traps is examined in thermal annealing experiments. The predictions of a simple model, in which the implantation associated displacement damage is considered to be the source of the additional electron traps, is compared to the experimental observations.Keywords
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- MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinelSolid-State Electronics, 1970