(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base

12 May 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (10) , 367-368
https://doi.org/10.1049/el:19830254

Abstract

The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors.

Keywords

MOLECULAR BEAM EPITAXY
HIGH SPEED OPERATION
FABRICATION
GRADED BANDGAP BASE
GRADED BASE COMPOSITION
SEMICONDUCTOR TECHNOLOGY
MBE
THREE TERMINAL DEVICE
III-V SEMICONDUCTORS
16 GHZ CUTOFF FREQUENCY
(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS

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