Changes to the ion temperature profile during IBW heating in PBX-M

1 January 1994

proceedings article
Published by AIP Publishing in AIP Conference Proceedings

Vol. 289 (1) , 72-75
https://doi.org/10.1063/1.44939

Abstract

The introduction of Ion Bernstein Wave Heating (IBWH) experiments in PBX‐M have demonstrated significant bulk ion heating and ion temperature (T_i) profile modification. T_i profiles were obtained using a multi‐channel, charge‐exchange recombination spectroscopy system (the CHERS diagnostic). With IBWH, there are density increases; so to produce comparative discharges when no IBWH is present, additional gas must be injected. For n̄_e, of ∼3×10¹³ cm⁻³, the central ion temperature, T_i0, was observed to increase by 350 eV when 0.6 MW of IBWH was applied for ∼300 msec. The product n̄_e T_i0, a measure of the ion stored energy, increases linearly with IBWH power. The T_i profile broadened with IBWH and the ion temperature gradient steepened near the predicted power deposition layer, providing evidence of localized heating. Examination of ΔT_i profile evolution indicated that the IBWH power was, in fact, deposited in a localized, off‐axis region.

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