Photochemical hole burning of tetraphenylporphin in phenoxy resin at 4.2–80 K
- 15 December 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (12) , 6041-6047
- https://doi.org/10.1063/1.343581
Abstract
Photochemical hole burning was performed with tetraphenylporphin doped in phenoxy resin (aromatic polyhydroxyether) at 4.2–80 K. Thermal stability of a hole burnt at a low temperature (4.2 K) and hole formation at high temperatures are studied for this system in order to obtain information on the dephasing and structural relaxation in the system.This publication has 9 references indexed in Scilit:
- Low energy excitation modes of amorphous polymers probed by photochemical hole burningChemical Physics Letters, 1989
- Photochemical hole burning of tetraphenylporphin in phenoxy resinApplied Physics Letters, 1988
- High Temperature Photochemical Hole Burning of Tetrasodium 5,10,15,20-tetra(4-sulfonatophenyl)porphin in PolyvinylalcoholJapanese Journal of Applied Physics, 1988
- Relation between hole-burning parameters and molecular parameters: free-base phthalocyanine in polymer hostsThe Journal of Physical Chemistry, 1986
- Measurement of quantum efficiencies for persistent spectral hole burningThe Journal of Physical Chemistry, 1984
- Photochemical Hole Burning: A Spectroscopic Study of Relaxation Processes in Polymers and GlassesAngewandte Chemie International Edition in English, 1984
- Theoretical description of photochemical hole burning in soft glassesChemical Physics Letters, 1983
- Mechanical relaxation phenomena in polyimide and poly(2,6‐dimethyl‐p‐phenylene oxide) from 100°K to 700°KPolymer Engineering & Science, 1973
- Anomalous low-temperature thermal properties of glasses and spin glassesPhilosophical Magazine, 1972