GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE

• 22 November 2001
• journal article
• research article
• Published by Wiley in Physica Status Solidi (a)
• Vol. 188  (1) , 31-35
• https://doi.org/10.1002/1521-396x(200111)188:1<31::aid-pssa31>3.3.co;2-g

Abstract

Keywords

• 68.35.BS
• 73.40.QV
• 73.50.DN
• 81.15.HI
• 85.30.TV
• S7.14