Reappearance of plasma induced oxide charge underFowler-Nordheim stress
- 17 February 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (4) , 367-368
- https://doi.org/10.1049/el:19940203
Abstract
The effect of plasma charging in thin gate oxide was studied under both polarities of Fowler-Nordheim (F-N) charge injection. The authors found that, although plasma induced oxide charge was temporarily removed, it reappears after F-N current injection. The results reveal that electron traps are created in nMOSFETs, whereas hole traps are created in pMOSFET due to the plasma etching in the process.Keywords
This publication has 4 references indexed in Scilit:
- Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdownIEEE Electron Device Letters, 1993
- Dependence of plasma-induced oxide charging current on Al antenna geometryIEEE Electron Device Letters, 1992
- Correlation of plasma process induced charging with Fowler-Nordheim stress in p- and n-channel transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Oxide Breakdown due to Charge Accumulation during Plasma EtchingJournal of the Electrochemical Society, 1987