Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- A silicon nanocrystals based memoryApplied Physics Letters, 1996
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Fabrication and Transport Properties of Silicon Quantum Wire Gate-All-Around TransistorJapanese Journal of Applied Physics, 1996
- Fabrication of Novel Si Double-Barrier Structures and Their CharacteristicsJapanese Journal of Applied Physics, 1995
- Room-temperature single-electron memoryIEEE Transactions on Electron Devices, 1994
- Resonant Tunneling through Si/SiO2Double BarriersJapanese Journal of Applied Physics, 1977
- A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviourPhilosophical Magazine, 1967