Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We report here for the first time the integration of sub-quarter micron CMOSFETs on bulk silicon using an oxidized metal gate dielectric. A polysilicon capped physical vapor deposited (PVD) titanium nitride (TiN) was used as the gate electrode. Well behaved MOSFET characteristics were obtained. In this paper, we present results on the physical and electrical characterization of titanium dioxide (TiO/sub 2/) produced by oxidizing a thin PVD Ti film.Keywords
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