Three-Dimensional MMIC Interconnect Process using Photosensitive BCB and STO Capacitors

1 October 1998

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 1, 642-647
https://doi.org/10.1109/euma.1998.338062

Abstract

This paper presents a new three-dimensional (3-D) MMIC interconnect process using photosensitive BCB (Benzocyclobutene) interlevel dielectric and STO (SrTiO3) capacitors. This technology significantly reduces process turn-around-time (TAT) and chip size. It yields MMICs with wide frequency range because the low temperature process can be applied to InGaAs and InP devices as well as GaAs and Si devices. A 50 GHz-band amplifier is fabricated to demonstrate this technology.

Keywords

MMICS
CAPACITORS
INTEGRATED CIRCUIT INTERCONNECTIONS
DIELECTRICS
FABRICATION
POLYIMIDES
RESISTS
PLASMA APPLICATIONS
LABORATORIES
INDIUM PHOSPHIDE

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