Fabrication of sub-40-nm p-n junctions for 0.18-μm MOS device applications using a cluster-tool-compatible, nanosecond thermal doping technique

15 February 1994

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 63-70
https://doi.org/10.1117/12.167367

Abstract

In this paper, we introduce an alternative deep-submicrometer doping technology, Projection Gas Immersion Laser Doping (P-GILD). Representing the marriage of lithography and diffusion, P-GILD is a resistless, step-and-repeat doping process that utilizes excimer laser light patterned by a dielectric reticle to selectively heat and, thereby, dope regions of an integrated circuit. Results of physical and electrical characterization are presented for ultra-shallow p⁺-n and n⁺-p junctions produced by gas immersion laser doping (GILD), a phenomenologically identical technique that utilizes an aluminum contact mask rather than a dielectric reticle to pattern the beam. Junctions produced using GILD exhibit uniformly-doped, abrupt impurity profiles with no apparent defect formation in the silicon.

Keywords

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