80 nm ultra-wideband erbium-doped silica fibre amplifier
- 6 November 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (23) , 1965-1967
- https://doi.org/10.1049/el:19971305
Abstract
The authors demonstrate a two band architecture for an ultra-wideband erbium-doped silica fibre amplifier with a record optical bandwidth of 80 nm. To obtain a low noise figure and high output power, the two bands share a common first gain section and have distinct second gain sections.Keywords
This publication has 5 references indexed in Scilit:
- Gain-flattened Er/sup 3+/-doped fiber amplifier for a WDM signal in the 1.57-1.60-μm wavelength regionIEEE Photonics Technology Letters, 1997
- Broadband and gain-flattened amplifier composedof a 1.55 µm-band and a 1.58 µm-band Er 3+ -doped fibre amplifierin a parallel configurationElectronics Letters, 1997
- Long-period fiber gratings as band-rejection filtersJournal of Lightwave Technology, 1996
- Low noise operation of Er 3+ doped silica fibre amplifier around 1.6 μmElectronics Letters, 1992
- High gain, broadband, 1.6 μm Er 3+ doped silica fibre amplifierElectronics Letters, 1990