Luminescence from HgCdTe alloys
- 1 September 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5779-5785
- https://doi.org/10.1063/1.329468
Abstract
We report the observation in Hg1−xCdxTe of band-to-band, band-to-acceptor, and donor-acceptor luminescence for material of x = 0.32 and 0.48, and bound exciton recombination luminescence, for material of 0.48. The band-to-band line shape and variation in intensity with pump power is appropriate to an electron-hole plasma with recombination proceeding without wave vector conservation. From line shape separations, we estimate acceptor binding energies of 14.0±1.0 and 15.5±2.0 meV in x = 0.32 and 0.48 material, respectively, and donor binding energies of 1.0±1.0 and 4.5±2.0 meV, respectively. Shifts in luminescence energy across the sample imply a change in composition across the sample of 0.03 cm−1.This publication has 16 references indexed in Scilit:
- Near-band-gap photoluminescence of Hg1−xCdxTeApplied Physics Letters, 1980
- Auger and radiative transition rates for acceptor bound excitons in direct-gap semiconductorsPhysical Review B, 1979
- Infrared optical absorption of Hg1−xCdxTeJournal of Applied Physics, 1979
- Photo- and cathodoluminescence of Cd0.3Hg0.7Te alloysPhysica Status Solidi (a), 1978
- Electrical and far-infrared optical properties of p-type Hg1−xCdxTeJournal of Applied Physics, 1976
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTeJournal of Physics and Chemistry of Solids, 1972
- Temperature and Alloy Compositional Dependences of the Energy Gap of Hg1−xCdxTeJournal of Applied Physics, 1969
- Energy Gap in Hg1−xCdxTe by Optical AbsorptionJournal of Applied Physics, 1969
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967