Oxygen Precipitation Effects on the Deformation of Dislocation-Free Silicon

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Abstract
The yield phenomenon observed in dislocation‐free crystals of silicon is critically dependent on prior heat treatment at 1000°C. Since oxygen is always present in crystals grown from quartz crucibles, heat treatment at 1000°C is believed to result in silicon‐oxygen clusters. It is shown that these clusters are effective sites for the generation of dislocations. Since the velocities of dislocations in heat‐treated and unheat‐treated crystals is not altered, the lowered maximum stress is largely due to the increased numbers of dislocations generated at a relatively early stage of the deformation process.

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