Metal–GaSe and metal–InP interfaces: Schottky barrier formation and interfacial reactions

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Abstract
We have studied the formation of the interface between a range of metals and the semiconductors GaSe and InP using photoelectron spectroscopy and a synchrotron source. We concentrate in particular on the reactive metal Ni and the relatively unreactive metals Au and Ag. It is shown that metals which interact only weakly with GaSe yield a Fermi-level pinning behavior close to the Schottky limit but those metals which interact strongly lead to strong pinning of the Fermi level by interfacial defects. The complex interactions at Ni–InP and Au–InP interfaces are considered and the Fermi-level pinning behavior is discussed in terms of the defect model.