Positive and negative charge generation by hot carriers in n -MOSFETs

1 September 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (18) , 746-747
https://doi.org/10.1049/el:19830508

Abstract

By means of the charge pumping (CP) method the degradation effects in the oxide near drain have been sensitively investigated. Both negative and positive charges have been observed together with their distribution. These results can be explained by the two-dimensional electric-field configuration near drain.

Keywords

OXIDE
N-CHANNEL MOSFET
HOLE TRAPS
DEGRADATION EFFECTS
POSITIVE CHARGES
CHARGE DISTRIBUTION
TWO-DIMENSIONAL ELECTRIC-FIELD CONFIGURATION
NEGATIVE CHARGE GENERATION
DRAIN
CHARGE PUMPING METHOD
HOT CARRIERS
HIGH FIELD EFFECTS

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