M-H curves and magnetic domain structure of Co91Hf6Pd3/SiO2/Co91Hf6Pd3 multi-layered films.

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Abstract
The magnetic domain structure and the magnetization process of amorphous Co91Hf6Pd3/SiO2/amorphous Co91Hf6Pd3 multi-layered films which were photofabricated in rectangular patterns have been investigated. Exchange interaction between magnetic layers 1500 Å thick occurs when the thickness of the intermediate SiO2 layer prepared by sputtering is less than about 10 Å. When the SiO2 layer is about 10000 Å thick, however, magnetostatic interaction becomes weak and the magnetic layers become independent of each other. We have determined that when multilayered films have an SiO2 layer from 20 to 600 Å thick and are at least 10μm wide along the easy axis, no domain walls are present because magnetostatic interaction causes the magnetization of one magnetic layer to be oriented anti-parallel to that of the other along the easy axis. When a magnetic field is applied along the easy axis, the domain walls nucleate and displace only in the magnetic layer whose magnetization is anti-parallel to the field. On the other hand, when multi-layered films are subjected to a magnetic field along the hard axis, their magnetization is rotated.

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