GaAs varactor diode for u.h.f. t.v. tuners

7 August 1975

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 11 (16) , 391-392
https://doi.org/10.1049/el:19750296

Abstract

The design and fabrication of a GaAs varactor diode for u.h.f. t.v. tuners were carried out using a GaAs double epitaxial layer. The capacitance ratio of diode. C₃/C₂₅, is 6.0 and the series resistance at 470 MHz is 0.24 ω. These characteristics are much better than those of an Si diode and well satisfy the requirements for t.v. tuners.

Keywords

GAAS VARACTOR DIODE
UHF
FABRICATION
TV TUNERS
DESIGN

This publication has 0 references indexed in Scilit: