Ion implanted, outdiffusion produced diamond thin films

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Abstract
A thin film, produced by carbon ion implantation and outdiffusion at the temperature of irradiation, has been confirmed to be diamond using micro-Raman spectroscopy and electron diffraction. The Raman spectra contained a definitive diamond peak shifted slightly from that of natural diamond. This shift may be due to residual strain and is consistent with the broad linewidth. Fragments of the film over a micron in size were examined with transmission electron microscopy and found to be untwinned, single crystals. The film had been produced on a polycrystalline copper substrate. The carbon ions were at an ion energy of 120 keV and the irradiation was carried out to a high dose.