InGaAsP Sources And Detectors For The 1.0-1.7 μm Wavelength Range

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Abstract
This paper reviews recent progress in the development of InGaAsP optoelectronic devices for fiber optic communications in the 1.0-1.7 μm wavelength bands. With this material system high performance optical sources (both lasers and LEDs) and photodetectors may be prepared. Both vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) have been used to construct devices. Edge emitting LEDs with spectral widths of only 60 nm and modulation bandwidths exceeding 200 MHz can couple over 100 μW of optical power into 0.55 μm core graded index fiber. Single mode lasers with threshold currents below 100 mA couple more than 1 mW of optical power for long range communication applications. High speed PIN photodetectors with rise times less than 0.5 ns complete the picture. For the first time a complete optoelectronic technology can be developed around a single material system (InGaAsP) for the entire 1.0-1.7 μm spectral range.

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