A multiwafer plasma system for anodic nitridation and oxidation

1 May 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 5 (5) , 175-177
https://doi.org/10.1109/EDL.1984.25874

Abstract

An experimental, high throughput and clean multiwafer system for plasma anodization is described. The applications of this system towards growing anodic silicon nitride and anodic silicon dioxide films, as well as the anodic nitridation of SiO2films are demonstrated. Pure nitride films thicker than 15 nm may be produced at 950°C. Oxide films are grown at temperature as low as 600°C. SiO2films can be converted to a high percentage of nitride by anodic treatment.

Keywords

OXIDATION
BOATS
PLASMA TEMPERATURE
FURNACES
PLASMA APPLICATIONS
SEMICONDUCTOR FILMS
SILICON COMPOUNDS
PLASMA DENSITY
RADIO FREQUENCY
OPTICAL FILMS