Light emission from an ambipolar semiconducting polymer field-effect transistor
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- 15 December 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (25)
- https://doi.org/10.1063/1.2149986
Abstract
Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiNx is used as the gate dielectric on an n++-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.This publication has 9 references indexed in Scilit:
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