A proposed new method for damping relaxation oscillations in laser diodes

1 November 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (11) , 333-335
https://doi.org/10.1109/EDL.1982.25591

Abstract

A new concept of damping relaxation oscillations in injection laser diodes is described. This method involves the operation of the laser as a part of a bipolar transistor, and the damping is accomplished by reducing the carrier lifetime in the laser active region only at frequencies near resonance. The advantage of the proposed method is that the damping mechanism does not affect the laser operation at any other frequency range.

Keywords

DAMPING
DIODE LASERS
RESONANCE
RESONANT FREQUENCY
ARTIFICIAL INTELLIGENCE
CUTOFF FREQUENCY
CHARGE CARRIER LIFETIME
LEAKAGE CURRENT
OPTICAL DEVICES
CHARGE CARRIER DENSITY

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