X-Ray Method for the Differentiation of {111} Surfaces in AIIIBV Semiconducting Compounds
- 1 July 1959
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (7) , 960-962
- https://doi.org/10.1063/1.1776997
Abstract
Most of the AIIIBV semiconducting compounds have the zincblende crystal structure. This structure is noncentrosymmetric and as a consequence the modulii of F(hkl) and F(h̄k̄l̄), the geometrical structure factors, have different magnitudes. This difference results in a variation in the integrated intensities of certain x‐ray reflection from opposite sides of samples taken from crystals with the zincblende structure. X‐ray measurements of a series of {111} reflections from opposite sides of an InAs single crystal have been made and related to the etching characteristics of these surfaces.This publication has 3 references indexed in Scilit:
- Etch Pitting on Single-Crystal Indium AntimonideJournal of Applied Physics, 1958
- Influence of Crystal Orientation on the Surface Behavior of InSbJournal of Applied Physics, 1958
- Unterschiede in der Intensität der Röntgenstrahlen-reflexion an den beiden 111-Flächen der ZinkblendeThe European Physical Journal A, 1930