Band-Tail Absorption in Hydrogenated Amorphous Silicon
- 17 March 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 44 (11) , 749-752
- https://doi.org/10.1103/physrevlett.44.749
Abstract
Measurements of the primary and secondary photocurrent for photon energies above 0.58 eV in -Si: H solar-cell structures determine the absorption coefficient and give information about the density of valence-band-tail states as well as show that holes are mobile deep in the bandgap.
Keywords
This publication has 8 references indexed in Scilit:
- Absorption edge and internal electric fields in amorphous semiconductorsPublished by Elsevier ,2003
- Drift Mobility and Photoconductivity in Amorphous SiliconPhysica Status Solidi (b), 1978
- Electron and hole drift mobility in amorphous siliconApplied Physics Letters, 1977
- Electrical transport and photoconductivity in amorphous siliconPhysica Status Solidi (a), 1977
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Transport and recombination properties of amorphous arsenic telluridePhysical Review B, 1975
- Electronic Transport in Amorphous Silicon FilmsPhysical Review Letters, 1970