Electrical degradation of Al/TiW/CoSi2 shallow junctions

Abstract
TiW barrier properties have been investigated by electrical testing of shallow CoSi2 junctions. Rutherford backscattering and Auger analyses have been used to study Al(0.5% Cu)/TiW/CoSi2/Si structure. Based on the electrical data, it was demonstrated that 900 Å of TiW will serve as a good diffusion barrier up to 475 °C/30 min. The junctions failed at 450 °C when TiW thickness was reduced to 450 Å. The electrical data show the stress of TiW film does not show any significant effects on its properties. Furthermore, shallower junctions (i.e., p+n ) are more vulnerable to barrier failure.

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