III-V/II-VI double-barrier resonant tunneling structures

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Abstract
GaAs-ZnSe and InAs-ZnTe double-barrier resonant tunneling devices are proposed and analyzed theoretically. These structures would provide a novel way to study mixed III-V/II-VI materials systems and growth techniques, and may also yield devices that are faster and have greater peak-to-valley current ratios than GaAs-AlGaAs tunnel structures. In the GaAs-ZnSe system, the increase in speed is due to the smaller dielectric constant in ZnSe, compared to that in AlGaAs. In the InAs-ZnTe system, the increase in speed is due to the small dielectric constant in ZnTe and the high mobility in InAs, and the larger peak-to-valley ratio is due to the large conduction-band offset that is expected. We calculate current-voltage curves for these devices and show that their negative differential resistance current-voltage characteristics should be comparable or superior to those of GaAs-AlGaAs devices. The effects of band bending and the general method used to calculate current as a function of voltage are briefly discussed.