Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process
- 6 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (6) , 523-525
- https://doi.org/10.1063/1.100919
Abstract
Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect-free both at the interface and in the bulk of the film as revealed by high-resolution transmission electron microscopy.Keywords
This publication has 4 references indexed in Scilit:
- Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle processApplied Physics Letters, 1989
- Low-temperature silicon epitaxy by low-energy bias sputteringApplied Physics Letters, 1988
- I n s i t u substrate-surface cleaning for very low temperature silicon epitaxy by low-kinetic-energy particle bombardmentApplied Physics Letters, 1988
- Room-temperature copper metallization for ultralarge-scale integrated circuits by a low kinetic-energy particle processApplied Physics Letters, 1988